Visible and infrared image sensor
AssigneeOmniVision Technologies, Inc.
InventorsEric A. G. Webster, Howard E. Rhodes, Dominic Massetti
Life of this patent
Estimating the term…
Abstract
A pixel array including an SixGey layer disposed on a first semiconductor layer. A plurality of pixels is disposed in the first semiconductor layer. The plurality of pixels includes: (1) a first portion of pixels separated from the SixGey layer by a spacer region and (2) a second portion of pixels including a first doped region in contact with the SixGey layer. The pixel array also includes pinning wells disposed between individual pixels in the plurality of pixels. A first portion of the pinning wells extend through the first semiconductor layer. A second portion of the pinning wells extend through the first semiconductor layer and the SixGey layer.
Claims13
A pixel array, the pixel array comprising:
- an SixGey layer disposed under a first semiconductor layer;
- a plurality of pixels disposed in the first semiconductor layer, the plurality of pixels including:
- a plurality of doped regions, wherein each of the plurality of pixels includes a respective doped region;
- a first subset of pixels, wherein the respective doped region of each pixel of the first subset of pixels extends partially into the first semiconductor layer and is separated from the SixGey layer by a spacer region;
- and
- a second subset of pixels, wherein the respective doped region of each pixel of the second subset of pixels extends through the first semiconductor layer and is in contact with the SixGey layer;
- and
- a plurality of pinning wells, each pinning well of the plurality of pinning wells disposed between individual pixels in the plurality of pixels, wherein a first subset of pinning wells extends through the first semiconductor layer, and a second subset of pinning wells extends through the first semiconductor layer and the SixGey layer.
An image sensor, the image sensor comprising:
- a second semiconductor layer disposed on a back side of a first semiconductor layer;
- one or more groups of pixels disposed in a front side of the first semiconductor layer, the one or more groups of pixels including:
- a plurality of pixels comprising a first subset of pixels and a second subset of pixels, wherein each pixel of the plurality of pixels includes a first doped region,
- wherein the first doped region of each pixel of the first subset of pixels extends through the first semiconductor layer and is separated from the second semiconductor layer by a spacer region, and
- wherein the first doped region of the second subset of pixels extends through the first semiconductor layer and is in contact with the second semiconductor layer, and wherein the first doped region is of a same majority charge carrier type as the second semiconductor layer;
- pinning wells separating individual pixels in the groups of pixels, wherein the
- pinning wells extend through the first semiconductor layer;
- and
- deep pinning wells separating the one or more groups of pixels, wherein the deep pinning wells extend through the first and second semiconductor layers.
Dependencies are inferred from the claim text.