Solid-state imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorsKazuki Nomoto, Kaneyoshi Takeshita, Hiroyuki Ohri
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Abstract
A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.
Claims13
A device, comprising:
- a substrate;
- a first photoelectric conversion section on or above the substrate, wherein the first photoelectric conversion section includes a first impurity region of a first conductivity type;
- a first impurity layer on or above the substrate, wherein the first impurity layer has a second conductivity type opposite to the first conductivity type;
- a floating diffusion section;
- a transfer section between the first photoelectric conversion section and the floating diffusion section;
- an amplifying section configured to amplify a voltage from the floating diffusion section;
- and
- an element isolation region that at least partially surrounds the amplifying section.
Dependencies are inferred from the claim text.