Solid-state imaging device, manufacturing method thereof, and electronic apparatus
AssigneeSony Corporation
InventorYuki Miyanami
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.
Claims30
An imaging device comprising:
- a semiconductor substrate having a first side as a light incident side and a second side opposite to the first side;
- a plurality of photoelectric conversion portions disposed in the semiconductor substrate;
- a trench disposed between photoelectric conversion portions of the plurality of photoelectric conversion portions;
- a light shielding portion disposed adjacent the trench and including a first portion having a material made of a titanium nitride and a second portion having a material made of tungsten;
- a wiring layer disposed adjacent to the second side of the semiconductor substrate,
- wherein
- the trench includes a first material and a second material,
- at least one of the first material and the second material does not extend across the first side to an adjacent trench,
- the first material is selected from the group consisting of SiN, SiO2, SiCN, and SiOC, and
- the second material is selected from the group consisting of oxides of elemental hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, and lanthanoids;
- and
- a pixel transistor disposed at the second side of the semiconductor substrate and coupled to the wiring layer,
- wherein the pixel transistor comprises a reset transistor and an amplifying transistor, and
- wherein the photoelectric conversion portions share the reset transistor and the amplifying transistor.
An imaging device comprising:
- a semiconductor substrate having a first side as a light incident side and a second side opposite to the first side;
- a plurality of photoelectric conversion portions disposed in the semiconductor substrate;
- a trench disposed between photoelectric conversion portions of the plurality of photoelectric conversion portions;
- a light shielding portion disposed adjacent the trench and including a first portion having a material made of a titanium nitride and a second portion having a material made of tungsten;
- a wiring layer disposed adjacent to the second side of the semiconductor substrate,
- wherein
- the trench includes a first material and a second material,
- at least one of the first material and the second material does not extend across the first side to an adjacent trench,
- the first material is selected from the group consisting of SiN, SiO2, SiCN, and SiOC,
- the second material is selected from the group consisting of oxides of elemental hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, and lanthanoids, and
- a pixel separation portion including the first material is disposed within the trench, and
- a color filter,
- wherein the color filter includes a plurality of kinds of filter layers that each transmit light within different wavelength ranges, and
- wherein the pixel separation portion is formed so as to selectively absorb light within at least one of the wavelength ranges.
Dependencies are inferred from the claim text.