Biased deep trench isolation
AssigneeOmniVision Technologies, Inc.
InventorsYuanwei Zheng, Gang Chen, Duli Mao, Dyson H. Tai, Yi Ma
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Abstract
An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.
Claims10
A system of electrical interconnection, comprising:
- a plurality of deep trench isolation structures disposed in a semiconductor material, wherein the plurality of deep trench isolation structures include a dielectric material and a conductive material, and wherein the dielectric material is disposed between the conductive material and the semiconductor material;
- a through-semiconductor-via disposed in the semiconductor material and coupled to a negative voltage source;
- an optical shield disposed proximate to a backside of the semiconductor material to block a portion of image light from reaching the semiconductor material, wherein the optical shield is coupled to the through-semiconductor-via and the plurality of deep trench isolation structures with metal interconnects.
Dependencies are inferred from the claim text.