CMOS image sensors including vertical transistor
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-Sun Oh, Kyung-Ho Lee, Jung-Chak Ahn, Hee-Geun Jeong
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Abstract
Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.
Claims5
A complementary metal-oxide-semiconductor (CMOS) image sensor comprising:
- a photodiode in a substrate and spaced apart from a surface of the substrate;
- and
- a device isolation layer, a transfer gate electrode, and a floating diffusion region in the substrate adjacent to the surface of the substrate to vertically overlap the photodiode,
- wherein the transfer gate electrode is buried in the substrate;
- and
- wherein a top surface of the transfer gate electrode is at a lower level than the surface of the substrate.
Dependencies are inferred from the claim text.