Manufacturing method of thin film transistor, manufacturing method of array substrate and array substrate
AssigneeBoe Technology Group Co., Ltd.
InventorsSeongyeol Yoo, Seungjin Choi, Heecheol Kim, Youngsuk Song
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Abstract
A manufacturing method of a thin film transistor, a manufacturing method of an array substrate and an array substrate are provided. The manufacturing method of the thin film transistor comprises: forming an active layer, a source electrode and a drain electrode on a substrate by one patterning process, the active layer, the source electrode and the drain electrode being located in a same layer. The manufacturing method of the thin film transistor can effectively reduce the number of patterning processes, so as to enhance the capacity in mass production, and reduce the cost.
Claims16
A manufacturing method of a thin film transistor, comprising:
- forming an active layer, a source electrode and a drain electrode on a substrate by one patterning process comprising:
- coating a photoresist;
- exposing and developing the photoresist by using a multi-tone mask;
- and performing etching, ashing and metalizing by using the photoresist as the only mask, wherein
- the active layer, the source electrode and the drain electrode being located in a same layer.
A manufacturing method of an array substrate, comprising forming a thin film transistor and forming a pixel electrode, wherein the forming the thin film transistor comprises:
- forming an active layer, a source electrode and a drain electrode on a substrate by one patterning process comprising:
- coating a photoresist;
- exposing and developing the photoresist by using a multi-tone mask;
- and performing etching, ashing and metalizing by using the photoresist as the only mask, wherein
- the active layer, the source electrode and the drain electrode is located in a same layer.
Dependencies are inferred from the claim text.