Manufacturing method of thin film transistor array panel and thin film transistor array panel
AssigneeSamsung Display Co., Ltd.
InventorsJoon-Hwa Bae, Jong Chan Lee, Woong Hee Jeong, In Sun Hwang
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Abstract
A manufacturing method of a thin film transistor array panel according to an exemplary embodiment of the present invention includes forming an amorphous silicon thin film on a substrate. A lower region of the amorphous silicon thin film is crystallized to form a polycrystalline silicon thin film by irradiating a laser beam with an energy density of from about 150 mj/cm2 to about 250 mj/cm2 to the amorphous silicon thin film.
Claims19
A manufacturing method of a thin film transistor array panel, comprising:
- forming an amorphous silicon thin film on a substrate;
- and
- crystallizing a lower region of the amorphous silicon thin film to form a polycrystalline silicon thin film by irradiating a laser beam with an energy density of from about 150 mj/cm2 to about 250 mj/cm2 to the amorphous silicon thin film,
- wherein a thickness of an uncrystallized part of the amorphous silicon thin film is from about 10 nm to about 20 nm after crystallizing the lower region of the amorphous silicon thin film to form the polycrystalline silicon thin film.
A thin film transistor array panel, comprising:
- a gate insulating layer formed on a substrate;
- a polycrystalline silicon thin film formed on the gate insulating layer;
- an amorphous silicon thin film formed on the polycrystalline silicon thin film;
- and
- source and drain electrodes formed on the amorphous silicon thin film, wherein protrusions and depressions are formed on an interface between the polycrystalline silicon thin film and the amorphous silicon thin film.
A thin film transistor array panel, comprising:
- a gate line formed on a substrate
- a gate insulating layer formed the substrate, wherein the gate insulating layer covers the gate line;
- a polycrystalline silicon thin film formed on the gate insulating layer;
- an amorphous silicon thin film formed on the polycrystalline silicon thin film, wherein the polycrystalline silicon thin film comprises protrusions and depressions formed on an interface between the polycrystalline silicon thin film and the amorphous silicon thin film;
- source and drain electrodes formed on the amorphous silicon thin film;
- and
- a passivation layer formed on the source and drain electrodes.
Dependencies are inferred from the claim text.