US 9,806,099 B2 · Semiconductor device

Abstract

A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

Claims15

Dependent claims

A display device comprising:

a transistor comprising:
a gate electrode;
a gate insulating film over the gate electrode;
and
a semiconductor film comprising a channel formation region over the gate electrode with the gate insulating film therebetween,
a conductive layer, wherein a portion of the gate insulating film is formed over the conductive layer;
and
a metal oxide layer over the gate insulating film,
wherein the metal oxide layer contacts the conductive layer through an opening of the gate insulating film,
wherein the channel formation region comprises an oxide semiconductor, and
wherein the metal oxide layer contains hydrogen at a higher concentration than the semiconductor film.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims15