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US 9,806,096 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasahiko Hayakawa, Mitsunori Sakama, Satoshi Toriumi
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Abstract
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
Claims18
A semiconductor device comprising:
- a first pixel comprising:
- a thin film transistor over a substrate, the thin film transistor comprising a first portion and a second portion of a semiconductor layer;
- and
- a first pixel electrode electrically connected to the first portion of the semiconductor layer;
- a second pixel adjacent to the first pixel, the second pixel comprising:
- a second pixel electrode;
- and
- a planarization layer between the thin film transistor and both the first pixel electrode and the second pixel electrode,
- wherein the second portion of the semiconductor layer extends to the second pixel, the second portion of the semiconductor layer being contiguous with the first portion of the semiconductor layer, and
- wherein the second portion of the semiconductor layer and the second pixel electrode overlap each other.
7 more elements
A semiconductor device comprising:
- a first pixel comprising:
- a thin film transistor over a substrate, the thin film transistor comprising a first portion and a second portion of a semiconductor layer;
- and
- a first pixel electrode electrically connected to the first portion of the semiconductor layer;
- a second pixel adjacent to the first pixel, the second pixel comprising:
- a second pixel electrode;
- a planarization layer between the thin film transistor and both the first pixel electrode and the second pixel electrode;
- a liquid crystal layer over the planarization layer;
- and
- a second substrate opposed to the substrate,
- wherein the second portion of the semiconductor layer extends to the second pixel, the second portion of the semiconductor layer being contiguous with the first portion of the semiconductor layer, and
- wherein the second portion of the semiconductor layer and the second pixel electrode overlap each other.
9 more elements
A semiconductor device comprising:
- a first pixel comprising:
- a thin film transistor over a substrate, the thin film transistor comprising a first portion and a second portion of a semiconductor layer;
- a first pixel electrode electrically connected to the first portion of the semiconductor layer;
- and
- a first light-emitting layer over the first pixel electrode;
- a second pixel adjacent to the first pixel, the second pixel comprising:
- a second pixel electrode;
- and
- a second light-emitting layer over the second pixel electrode;
- and
- a planarization layer between the thin film transistor and both the first pixel electrode and the second pixel electrode,
- wherein the second portion of the semiconductor layer extends to the second pixel, the second portion of the semiconductor layer being contiguous with the first portion of the semiconductor layer, and
- wherein the second portion of the semiconductor layer and the second pixel electrode overlap each other.
10 more elements
Dependencies are inferred from the claim text.