Semiconductor device and method of forming the same
AssigneeUnited Microelectronics Corp.
InventorSanpo Wang
Life of this patent
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Abstract
The present invention provides a semiconductor device and a method of forming the same, and the semiconductor device includes a first insulating layer, a source and a drain, a stacked structure, a second insulating layer, and a gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed on the first insulating layer, and the stacked structure is also disposed on the first insulating layer, between the source and the drain. The stacked structure includes a charge storage layer and an oxide semiconductor (OS) layer disposed on the charge storage layer. The second insulating layer covers the source, the drain and the OS layer. The gate is disposed on the second insulating layer.
Claims21
A semiconductor device, comprising:
- a first insulating layer disposed on a substrate;
- a source region and a drain region disposed on the first insulating layer;
- a stacking structure disposed on the first insulating layer between the source region and the drain region, wherein the stacking structure comprises a charge storage layer and an oxide semiconductor layer disposed thereon, the charge storage layer comprises an oxide-nitride-oxide stacking structure and sidewalls of the charge storage layer and the oxide semiconductor layer are vertically aligned;
- a dielectric layer covering the source region, the drain region and the oxide semiconductor layer;
- and
- a gate disposed on the dielectric layer.
A method of forming a semiconductor device, comprising:
- providing a first insulating layer;
- forming a stacking structure on the first insulating layer, wherein the stacking structure comprises a charge storage layer and an oxide semiconductor layer disposed thereon, wherein the charge storage layer comprises an oxide-nitride-oxide stacking structure and sidewalls of the charge storage layer and the oxide semiconductor layer are vertically aligned;
- forming a source region and a drain region on the first insulating and disposed on each side of the stacking structure respectively;
- forming a dielectric layer covering the source region, the drain region and the stacking structure;
- and
- forming a gate disposed on the dielectric layer.
Dependencies are inferred from the claim text.