Semiconductor device having sub-cell blocks

A semiconductor device, comprising:

• a substrate including a cell region and a main peripheral region, the cell region having a plurality of sub-cell blocks spaced apart from each other by a plurality of opening regions and the main peripheral region surrounding the cell region;
• first word lines that are buried in the substrate of each of the sub-cell blocks;
• at least one second word line that is buried in the substrate of each of the opening regions;
• a plurality of lower electrodes having a bottom-closed cylindrical shape in each of the sub-cell blocks,
• a first supporting pattern provided to support lower portions of outer sidewalls of the lower electrodes in each of the sub-cell blocks;
• a second supporting pattern provided to support upper portions of the outer sidewalls of the lower electrodes in each of the sub-cell blocks;
• and
• a dielectric layer conformally covering inner and outer sidewalls of the lower electrodes, and an upper electrode on the dielectric layer,
• wherein:
• each of the first and second supporting patterns has a plate-shaped structure to surround all of the lower electrodes which are located in each of the sub-cell blocks;
• the lower electrodes, the first supporting pattern and the second supporting pattern do not exist in each of the opening regions;
• and
• the dielectric layer covers the at least one second word line in each of the opening regions.