Semiconductor structure with low defect and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBlandine Duriez, Georgios Vellianitis
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Abstract
A semiconductor structure and a method for forming the same are provided. The method for manufacturing a semiconductor structure includes forming a fin structure over a substrate and forming an insulating layer around the fin structure. The method for manufacturing a semiconductor structure further includes removing a portion of the fin structure to form a trench in the insulating layer and filling the trench with a semiconductor material. The method for manufacturing a semiconductor structure further includes reflowing the semiconductor material to form a nanowire structure and a cavity under the nanowire structure.
Claims20
A method for forming a semiconductor structure, comprising:
- forming a fin structure over a substrate;
- forming an insulating layer around the fin structure;
- removing a portion of the fin structure to form a trench in the insulating layer;
- filling the trench with a semiconductor material;
- and
- reflowing the semiconductor material to form a nanowire structure and a cavity under the nanowire structure.
A method for forming a semiconductor structure, comprising:
- forming a first fin structure over a substrate;
- forming an insulating layer around the first fin structure;
- removing a portion of the first fin structure to form a first trench in the insulating layer;
- filling the first trench with a semiconductor material;
- and
- reflowing the semiconductor material to form a first cavity at a bottom portion of the first trench by performing an annealing process.
A method for forming a semiconductor structure, comprising:
- forming a fin structure from a substrate;
- forming an insulating layer around the fin structure;
- removing a portion of the fin structure to form a trench;
- filling the trench with a semiconductor material;
- forming a cavity under the semiconductor material;
- forming a gate structure across the semiconductor material;
- and
- forming source/drain regions in the semiconductor material.
Dependencies are inferred from the claim text.