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US 9,806,074 B2Granted
High voltage multiple channel LDMOS
AssigneeTexas Instruments Incorporated
InventorsYongxi Zhang, Sameer P. Pendharkar
Life of this patent
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Abstract
An integrated circuit and method having an LDMOS transistor with multiple current channels. A first current channel is above a buried p-type diffusion and a second one current channel is below the buried p-type diffusion.
Claims16
An integrated circuit, comprising:
- an NMOS transistor;
- a PMOS transistor;
- a lateral diffused metal-oxide-semiconductor (LDMOS) transistor with a gate, source, drain and at least two current channels coupled between the source and the drain;
- and
- wherein the gate switches current in the current channels, wherein
- the LDMOS transistor is an n-channel LDMOS(LDNMOS) transistor;
- the at least two current channels are horizontal current channels;
- a first horizontal current channel is formed in a first lateral doped n-type diffusion beneath a top p-type diffusion and above a buried p-type diffusion;
- and
- a second horizontal current channel is formed in a buried n-type diffusion beneath the buried p-type diffusion and above a p-type substrate.
7 more elements
An integrated circuit, comprising:
- an NMOS transistor;
- a PMOS transistor;
- a lateral diffused metal-oxide-semiconductor (LDMOS) transistor with a gate, source, drain and at least two current channels coupled between the source and the drain;
- and
- wherein the gate switches current in the current channels, wherein
- the LDMOS transistor is a p-channel LDMOS (LDPMOS) transistor;
- the at least two current channels are horizontal current channels;
- a first horizontal current channel is formed in a first lateral doped p-type diffusion beneath a top n-type diffusion and above a buried n-type diffusion;
- and
- a second horizontal current channel is formed in a buried p-type diffusion beneath the buried n-type diffusion and above an n-type substrate.
7 more elements
An integrated circuit, comprising:
- an NMOS transistor;
- a PMOS transistor;
- a lateral diffused metal-oxide-semiconductor (LDMOS) transistor with a first gate, with source, a drain and at least two current channels coupled between the source and the drain;
- and
- a second LDMOS transistor with a second gate wherein the first and second LDMOS transistors share the source and the drain and wherein current from the second LDMOS transistor flows through at least one of the current channels;
- wherein the first and second gates switch current in the current channels;
- wherein
- the first LDMOS transistor is an n-channel LDMOS (LDNMOS) transistor and wherein the second LDMOS transistor is a LDNMOS transistor;
- the at least two current channels are horizontal current channels;
- a first horizontal current channel is formed in lateral doped n-type diffusion beneath a top p-type diffusion and above a buried p-type diffusion;
- a second horizontal current channel is formed in a buried n-type diffusion beneath the buried p-type diffusion and above a p-type substrate;
- the first LDNMOS transistor switches a first current in the first horizontal current channel and the first current in the second horizontal channel;
- and
- the second LDNMOS transistor switches a second current in the second horizontal current channel.
11 more elements
An integrated circuit, comprising:
- an NMOS transistor;
- a PMOS transistor;
- a lateral diffused metal-oxide-semiconductor (LDMOS) transistor with a first gate, a source, a drain and at least two current channels coupled between the source and the drain;
- and
- a second LDMOS transistor with a second gate wherein the first and second LDMOS transistors share the source and the drain and wherein current from the second LDMOS transistor flows through at least one of the current channels;
- wherein the first and second gates switch current in the current channels, wherein
- the first LDMOS transistor is a p-channel LDMOS (LDPMOS) transistor and wherein the second LDMOS transistor is a LDPMOS transistor;
- the at least two current channels are horizontal current channels;
- a first horizontal current channel is formed in lateral doped p-type diffusion beneath a top n-type diffusion and above a buried n-type diffusion;
- a second horizontal current channel is formed in a buried p-type diffusion beneath the buried n-type diffusion and above a n-type substrate;
- the first LDPMOS transistor switches a first current in the first horizontal current channel and switches the first current in the second horizontal channel;
- and
- the second LDPMOS transistor switches a second current in the second horizontal current channel.
10 more elements
An integrated circuit, comprising:
- an NMOS transistor;
- a PMOS transistor;
- a lateral diffused metal-oxide-semiconductor (LDMOS) transistor with a gate, with a source, a drain, a first horizontal current path between the source and drain and a second horizontal current path between the source and drain, wherein the first horizontal current path is formed in a first lateral doped diffusion of a first conductivity type beneath a top diffusion of a second conductivity type and above a buried diffusion of the second conductivity type and the second horizontal current path is formed in a buried diffusion of the first conductivity type beneath the buried diffusion of the second conductivity type and above a substrate of the second conductivity type.
Dependencies are inferred from the claim text.