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US 9,806,073 B2Granted
Electronic circuits including diode-connected bipolar junction transistors
AssigneeSK hynix Inc.
InventorHyun Min Song
Life of this patent
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Abstract
A diode-connected bipolar junction transistor includes a common collector region of a first conductivity, a common base region of a second conductivity disposed over the common collector region, and a plurality of emitter regions of the first conductivity disposed over the common base region, arranged to be spaced apart from each other, and arranged to have island shapes. The common base region and the common collector region are electrically coupled to each other.
Claims11
An electronic circuit comprising a diode-connected bipolar junction transistor,
- wherein the diode-connected bipolar junction transistor comprises:
- a common collector region of a first conductivity;
- a common base region of a second conductivity disposed over the common collector region;
- and
- a plurality of emitter regions of the first conductivity disposed over the common base region, arranged to be spaced apart from each other, and arranged to have island shapes,
- wherein the common base region and the common collector region are electrically coupled to a collector node.
3 more elements
Dependencies are inferred from the claim text.