Multi-stack package-on-package structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Jung Lee, Hsien-Wei Chen, An-Jhih Su, Wei-Yu Chen, Tien-Chung Yang, Li-Hsien Huang
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Abstract
Multi-stack package-on-package structures are disclosed. In a method, a first stacked semiconductor device is formed on a first carrier wafer. The first stacked semiconductor device is singulated. The first stacked semiconductor device is adhered to a second carrier wafer. A second semiconductor device is attached on the first stacked semiconductor device. The second semiconductor device and the first stacked semiconductor device are encapsulated. Electrical connections are formed on and electrically coupled to the first stacked semiconductor device and the second semiconductor device.
Claims20
A method comprising:
- forming a first stacked semiconductor device on a first carrier wafer;
- singulating the first stacked semiconductor device;
- adhering the first stacked semiconductor device to a second carrier wafer;
- attaching a second semiconductor device on the first stacked semiconductor device;
- encapsulating the second semiconductor device and the first stacked semiconductor device;
- singulating the first stacked semiconductor device and the second semiconductor device from the second carrier wafer;
- and
- forming electrical connections on and electrically coupled to the first stacked semiconductor device and the second semiconductor device.
A method comprising:
- adhering a first plurality of dies to a device region on a first substrate;
- forming a first plurality of through vias in electrical connection with the first plurality of dies;
- attaching a second plurality of dies on the first plurality of dies, the second plurality of dies surrounded by the first plurality of through vias;
- singulating the device region to form a stacked device;
- adhering the stacked device to a second substrate;
- providing a third die on the stacked device;
- depositing an encapsulant on the stacked device and the third die;
- and
- forming a redistribution layer over the encapsulant, the redistribution layer electrically coupled to the first plurality of dies, the second plurality of dies, and the third die.
A method comprising:
- forming a first stacked semiconductor device comprising:
- placing first integrated circuit dies over a first carrier wafer, each first integrated circuit die of the first integrated circuit dies having a dielectric layer over the first integrated circuit die and facing away from the first carrier wafer;
- thinning the first carrier wafer;
- and
- cutting along scribe lines of the first carrier wafer;
- forming a second stacked semiconductor device comprising:
- adhering the first stacked semiconductor device to a second carrier wafer;
- attaching a second integrated circuit die on the first stacked semiconductor device;
- and
- encapsulating the first stacked semiconductor device and the second integrated circuit die;
- and
- forming electrical connections on and electrically coupled to the first integrated circuit dies and the second integrated circuit die.
Dependencies are inferred from the claim text.