Method of packaging integrated circuits

A method of packaging integrated circuits, the method comprising:

• placing a plurality of semiconductor dies on a support substrate, each of the semiconductor dies having a plurality of terminals at a side facing the support substrate;
• covering the semiconductor dies with a molding compound to form a molded structure, the molding compound contacting edge faces of each semiconductor die, the edge faces extending perpendicular to the side uncovered by the molding compound, the molded structure having a first side at which the terminals of the semiconductor dies are uncovered by the molding compound and a second side opposite the first side;
• removing the support substrate from the molded structure to expose the side of the semiconductor dies with the terminals;
• and
• forming a metal redistribution layer on the first side of the molded structure and in direct contact with the terminals of the semiconductor dies and the same molding compound that contacts the edge faces of each semiconductor die, the metal redistribution layer comprising pad structures in direct contact with the terminals of the semiconductor dies and the molding compound, the pad structures having a larger surface area than the terminals of the semiconductor dies,
• wherein the metal redistribution layer is electrically isolated from the second side of the molded structure.

A method of manufacturing a molded semiconductor package, the method comprising:

• embedding a semiconductor die in a molding compound, the semiconductor die having a plurality of terminals at a side uncovered by the molding compound, the molding compound contacting edge faces of the semiconductor die, the edge faces extending perpendicular to the side uncovered by the molding compound;
• and
• forming a metal redistribution layer in direct contact with the terminals of the semiconductor die and extending beyond a lateral edge of the semiconductor die onto the molding compound, the metal redistribution layer directly contacting the same molding compound that contacts the edge faces of the semiconductor die, the metal redistribution layer comprising pad structures in direct contact with the terminals of the semiconductor dies and the molding compound, the pad structures having a larger surface area than the terminals of the semiconductor dies,
• wherein the molding compound is devoid of electrically conductive vias.