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US 9,806,049 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorAkira Yajima
Life of this patent
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Abstract
In the semiconductor device, a bump electrode which connects a semiconductor chip and a wiring board is made up of a first part surrounded by an insulating film and a second part exposed from the insulating film. Since it is possible to reduce a width of the bump electrode while increasing a height of the bump electrode, a distance between the neighboring bump electrodes can be increased, and a filling property of a sealing material can be improved.
Claims14
A semiconductor device comprising:
- a semiconductor substrate;
- a conductive layer formed on the semiconductor substrate;
- a first insulating film which is formed on the conductive layer and covers the conductive layer;
- a second insulating film which is formed on the first insulating film and includes an opening which exposes a part of a surface of the conductive layer;
- a bump electrode which is made up of a first part which is in contact with the conductive layer and positioned in the opening and a second part which is positioned on the opening and exposed from the second insulating film;
- a terminal which is connected to the bump electrode and is formed on a surface of a wiring board;
- and
- a sealing material which fills a gap between the semiconductor substrate and the wiring board,
- wherein the sealing material is in contact with the first insulating film on an outer side of the second insulating film which covers the periphery of the first part of the bump electrode.
6 more elements
Dependencies are inferred from the claim text.