Semiconductor device structure and manufacturing method

A semiconductor device structure, comprising:

• a semiconductor substrate;
• a dielectric layer disposed over the semiconductor substrate;
• a conductive trace disposed over the dielectric layer, the conductive trace extending in a first direction;
• an under-bump metallization (UBM) disposed over a segment, but not an entirety of, a top surface and a side surface of the conductive trace, wherein the UBM substantially extends beyond the conductive trace in a second direction different from the first direction, and a first portion of the conductive trace covered by the UBM and a second portion of the conductive trace not covered by the UBM have substantially same widths;
• and
• a conductive bump disposed over the UBM, wherein the conductive bump and the dielectric layer collectively surrounds the conductive trace in a cross-sectional view.

A method for forming a semiconductor device structure, comprising:

• forming a dielectric layer over a semiconductor substrate;
• forming a conductive trace over the dielectric layer;
• forming a conductive feature over a segment, but not an entirety of, a top surface and a side surface of the conductive trace, wherein a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace, and a first portion of the conductive trace covered by the conductive feature and a second portion of the conductive trace not covered by the conductive feature have substantially same widths;
• and
• forming a conductive bump over the conductive feature in a manner such that a side wall of the conductive trace is surrounded by the conductive bump.