Integrated circuit structure with refractory metal alignment marker and methods of forming same

A method of forming an integrated circuit (IC) structure, the method comprising:

• providing a precursor structure including:
• a first inter-metal dielectric (IMD),
• a barrier dielectric positioned on the first IMD;
• forming an insulator on the barrier dielectric of the precursor structure, wherein an upper surface of the insulator includes a first trench, a second trench laterally separated from the first trench, and a third trench laterally separated from the first and second trenches, wherein the second trench is positioned laterally between the first and third trenches;
• forming a first refractory metal film on the insulator and within each of the first trench, the second trench, and the third trench;
• planarizing the first refractory metal film to expose an upper surface of the insulator, such that a remainder of the first refractory metal film forms an alignment marker within the first trench, a first metal-insulator-metal (MIM) electrode within the second trench, and a resistor wire within the third trench;
• recessing the insulator without exposing an upper surface of the barrier dielectric;
• forming a MIM dielectric layer on the insulator;
• and
• forming a second MIM electrode on the MIM dielectric layer, such that the second MIM electrode overlies a portion of the first MIM electrode.