Simultaneous formation of liner and metal conductor
AssigneeInternational Business Machines Corporation
InventorsDaniel C. Edelstein, Chih-Chao Yang
Life of this patent
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Abstract
An integrated circuit device having a substrate including a dielectric layer is patterned with a set of conductive line trenches. Each conductive line trench has parallel vertical sidewalls and a horizontal bottom. A first metal fills a first portion of the set of conductive line trenches, wherein the metal fill is created by an anneal and reflow process. A liner which is an alloy of the first metal and a selected element is formed at the interfaces of the metal layer and a surface of the dielectric and is created simultaneously with the metal fill by the anneal and reflow process. A second metal layer fills a remainder portion of the set of conductive line trenches.
Claims6
An integrated circuit device comprising:
- a substrate including a dielectric layer patterned with a set of conductive line trenches, each conductive line trench having parallel vertical sidewalls and a horizontal bottom;
- a first metal layer filling a first portion of the set of conductive line trenches, wherein the first metal layer is created by an anneal and reflow process;
- a liner which is an alloy of the first metal layer and a selected element formed at interfaces of the first metal layer and a surface of the dielectric, created simultaneously with the first metal layer by the anneal and reflow process;
- and
- a second metal layer filling a remainder portion of the set of conductive line trenches;
- wherein the first metal layer is comprised of aluminum and the selected element is nitrogen.
Dependencies are inferred from the claim text.