Multilayer structure for a semiconductor device and a method of forming a multilayer structure for a semiconductor device
AssigneeInstitute of Technical Education
InventorsTeck Kheng Lee, Bok Leng Ser
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Abstract
A multilayer structure for a semiconductor device and a method of forming a multilayer structure for a semiconductor device. The multilayer structure comprises: a substrate having an electrically conductive portion thereon; a dielectric layer formed over the substrate; the dielectric layer comprising an opening over at least part of the electrically conductive portion; and a conductive pillar formed on the at least part of the electrically conductive portion; wherein the conductive pillar comprises walls defined by at least the opening of the dielectric layer and an opening of a patterned layer.
Claims35
A multilayer structure for a semiconductor device, the multilayer structure comprising:
- a substrate having an electrically conductive portion thereon;
- a photoimagable dielectric layer formed over the substrate;
- the dielectric layer comprising an opening over at least part of the electrically conductive portion;
- and
- a conductive pillar formed on the at least part of the electrically conductive portion;
- wherein the conductive pillar comprises walls defined by the opening of the dielectric layer and an opening of a photoimagable patterned layer, where the walls are in contact with the dielectric layer and the patterned layer,
- a top substantially flush with a top surface of the patterned layer, such that the conductive pillar is of a size which is substantially equal to combined sizes of the opening of the dielectric layer and the opening of the patterned layer;
- said patterned layer formed over the dielectric layer and wherein the patterned layer has been removed.
The multilayer structure as claimed in claim, 1 wherein the substrate comprises a wafer.
A method of forming a multilayer structure for a semiconductor device, the method comprising:
- providing a construct comprising:
- a substrate having an electrically conductive portion thereon;
- a photoimagable dielectric layer that is formed over the substrate;
- an opening in said dielectric layer that is formed over at least part of the electrically conductive portion;
- and
- a photoimagable patterned layer that is formed over the dielectric layer;
- forming a conductive pillar on the at least part of the electrically conductive portion, such that the walls of the conductive pillar are defined by the opening of the dielectric layer and an opening of the patterned layer, the walls in contact with the dielectric layer and the patterned layer, a top of the conductive pillar substantially flush with a top surface of the patterned layer,
- such that the conductive pillar is of a size which is substantially equal to combined sizes of the opening of the dielectric layer and the opening of the patterned layer;
- and removing the patterned layer.
Dependencies are inferred from the claim text.