IC carrier of semiconductor package and manufacturing method thereof
AssigneePhoenix Pioneer Technology Co., Ltd.
InventorsShih-Ping Hsu, Chao-Tsung Tseng
Life of this patent
Estimating the term…
Abstract
The present invention discloses an IC Carrier of a semiconductor package and its manufacturing method. The IC Carrier of the semiconductor package includes a dielectric layer and a patterned conductor layer. The dielectric layer has at least one opening groove. The patterned conductor layer is embedded in the dielectric layer, wherein a part of the patterned conductor layer is as a conductive pillar, which has two exposed ends, and a part of the patterned conductor layer is as a conductive wire, which only has one exposed end.
Claims16
A manufacturing method for making an IC carrier of a semiconductor package comprising:
- forming a patterned conductor layer on a surface of a temporary substrate;
- forming a dielectric layer on the surface of the temporary substrate and covering the patterned conductor layer;
- forming at least an opening groove in the dielectric layer to expose a part of the patterned conductor layer;
- and
- removing the temporary substrate to expose one side of the patterned conductor layer and a part of the dielectric layer,
- wherein a part of the patterned conductor layer forms a conductive pillar, which has two exposed ends, and a part of the patterned conductor layer forms a conductive wire, which only has one exposed end, the conductive pillar and the conductive wire are formed simultaneously in the same fabrication processing step so that a height of the conductive pillar is same as to a height of the conductive wire, and are electrically isolated from each other by the dielectric layer.
An IC carrier of a semiconductor package, comprising:
- a dielectric layer, which has at least an opening groove;
- and
- at least a patterned conductor layer, which is embedded in the dielectric layer,
- wherein a part of the patterned conductor layer forms a conductive pillar, which has two exposed ends, and a part of the patterned conductor layer forms a conductive wire, which only has one exposed end, the conductive pillar and the conductive wire are electrically isolated from each other by the dielectric layer, and a height of the conductive pillar is same as to a height of the conductive wire.
Dependencies are inferred from the claim text.