Semiconductor device and power converter using the same

Abstract

To suppress a temperature rise of a chip accompanying a production of large output by a power converter, and to reduce a size of the power converter. A power semiconductor device includes: a first power semiconductor element to configure an upper arm of an inverter circuit; a second power semiconductor element to configure a lower arm of the inverter circuit; a first lead frame to transmit power to the first power semiconductor element; a second lead frame to transmit power to the second power semiconductor element; a first gate lead frame to transmit a control signal to the first power semiconductor element; and a sealing member to seal the first power semiconductor element, the second power semiconductor element, the first lead frame, the second lead frame, and the first gate lead frame. In the power semiconductor device, a through-hole is formed in the sealing member, and a part of the first gate lead frame and a part of the second lead frame are exposed to an inner peripheral surface of the through-hole.

Dependencies are inferred from the claim text.