Sacrificial cap for forming semiconductor contact

A method for forming a semiconductor device, the method comprising:

• forming a first fin and a second fin on a substrate;
• forming a sacrificial gate stack over a channel region of the first fin and a channel region of the second fin;
• forming a source/drain region with a first material on the first fin and the second fin, wherein forming the source/drain region includes forming a connection between the first fin and the second fin with the first material;
• forming a first cap layer with a second material over the source/drain region;
• forming a second cap layer with a third material on the first cap layer;
• depositing a dielectric layer over the second cap layer;
• removing the sacrificial gate stack to expose a channel region of the first fin;
• forming a gate stack over the channel region of the first fin;
• removing a portion of the dielectric layer to expose the second cap layer;
• selectively removing the second cap layer and the first cap layer to expose the source/drain region;
• and
• depositing a conductive material on the source/drain region.

A method for forming a semiconductor device, the method comprising:

• forming a first fin and a second fin on a substrate;
• forming a sacrificial gate stack over a channel region of the first fin and a channel region of the second fin;
• forming a source/drain region with a first material on the first fin and the second fin;
• forming a first cap layer with a second material over the source/drain region, wherein the first cap layer forms a connection between the source/drain region on the first fin and the source/drain region on the second fin;
• forming a second cap layer with a third material on the first cap layer;
• depositing a dielectric layer over the second cap layer;
• removing the sacrificial gate stack to expose a channel region of the first fin;
• forming a gate stack over the channel region of the first fin;
• removing a portion of the dielectric layer to expose the second cap layer;
• selectively removing the second cap layer and the first cap layer to expose the source/drain region;
• and
• depositing a conductive material on the source/drain region.