Method of manufacturing semiconductor device and semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon Jhy Liaw
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes removing a first gate among a plurality of gates over a substrate. Removing the first gate exposes a first portion of an active area region under the first gate. The method further includes forming a first dielectric dummy gate over the exposed first portion of the active area region. The method further includes removing a second gate among the plurality of gates, wherein removing the second gate exposes a second portion of the active area region. The method further includes depositing a first gate electrode over the exposed second portion of the active area region.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- removing a first gate among a plurality of gates over a substrate, wherein removing the first gate exposes a first portion of an active area region under the first gate;
- forming a first dielectric dummy gate over the exposed first portion of the active area region;
- removing a second gate among the plurality of gates, wherein removing the second gate exposes a second portion of the active area region;
- and
- depositing a first gate electrode over the exposed second portion of the active area region.
A method of manufacturing a semiconductor device, the method comprising:
- replacing a first gate among a plurality of gates over a substrate with a first dielectric dummy gate, wherein the first dielectric dummy gate is at least partially over a first isolation feature;
- replacing a second gate among the plurality of gates with a first gate electrode over a first portion of an active area region of the substrate;
- and
- replacing a third gate among the plurality of gate with a second gate electrode over a second portion of the active area region, wherein the first portion of the active area region is between the second portion of the active area region and the isolation feature.
Dependencies are inferred from the claim text.