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US 9,805,984 B2Granted
FinFET device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJoanna Chaw Yane Yin, Chi-Hsi Wu, Kuo-Chiang Ting, Chen Kuang-Hsin
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Abstract
The present disclosure provides many different embodiments of a FinFET device that provide one or more improvements over the prior art. In one embodiment, a FinFET includes a semiconductor substrate and a plurality of fins having a first height and a plurality of fin having a second height on the semiconductor substrate. The second height may be less than the first height.
Claims20
A device comprising:
- a first fin structure disposed over a substrate and having a first height over a surface of the substrate;
- a dummy semiconductor structure adjacent the first fin structure and disposed over the substrate, wherein the dummy semiconductor structure has a sidewall extending from the surface of the substrate to a second height that is less than the first height;
- and
- an isolation structure extending from the first fin structure to the dummy semiconductor structure and at least partially covering a top surface of the dummy semiconductor structure, wherein the isolation structure extends continuously from the surface of the substrate to at least the top surface of the dummy semiconductor structure, the top surface of the dummy semiconductor structure facing away from the substrate.
1 more element
A fin-type field effect transistor (FINFET) device comprising:
- a first fin structure disposed over a substrate and having a first height over a surface of the substrate;
- a second fin structure disposed over the substrate and having the first height over the surface of the substrate;
- at least one residual dummy structure interposing the first and second fin structures, wherein the residual dummy structure is a protrusion of semiconductor material having a second height over the surface of the substrate, the second height less than the first height;
- and
- an isolation structure extending from a sidewall of the first fin structure to a sidewall of the second fin structure and disposed in a space over the at least one residual dummy structure, wherein the isolation structure includes one or more dielectric materials.
2 more elements
A fin-type field effect transistor (FINFET) device comprising:
- first and second active fin structures each having a top surface disposed at a first height over a surface of the substrate;
- a gate structure extending over the first and second active fin structures;
- a source and drain feature extending over the first and second active fin structures;
- a dummy fin structure over the surface of the substrate, wherein the dummy fin structure includes a protrusion of semiconductor material extending from the surface of the substrate, the protrusion having a top surface disposed at a second height over the surface of the substrate, and wherein the second height is less than the first height;
- and
- an isolation structure disposed over the dummy fin structure, wherein the isolation structure covers the top surface of the protrusion and extends to a sidewall of the first active fin structure.
3 more elements
Dependencies are inferred from the claim text.