Method of manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsKohei Miki, Kazuyuki Onoe, Shinichi Miyakuni
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes: forming a resist separation layer on a first main surface of a SiC substrate; applying a resist retaining a shape at a temperature of 200° C. or higher on the resist separation layer; patterning the resist by photolithography; heating a stage an which the SiC substrate is placed to a temperature of 200° C. or higher by a temperature control function, and dry-etching the SiC substrate by using the patterned resist as a mask to form a via hole; and after forming the via hole, removing the resist separation layer to separate the resist from the SiC substrate.
Claims17
A method of manufacturing a semiconductor device comprising:
- forming a resist separation layer on a first main surface of a SiC substrate;
- applying a resist retaining a shape at a temperature of 200° C. or higher on the resist separation layer;
- patterning the resist separation layer and the resist together by a single photolithography step;
- heating a stage on which the SiC substrate is placed to a temperature of 200° C. or higher by a temperature control function, and dry-etching the SiC substrate by using the patterned resist as a mask to form a via hole;
- and
- after forming the via hole, removing the resist separation layer to separate the resist from the SiC substrate.
A method of manufacturing a semiconductor device comprising:
- forming a resist separation layer on a first main surface of a SiC substrate;
- applying a resist retaining a shape at a temperature of 200° C. or higher on the resist separation layer;
- patterning the resist by photolithography;
- heating a stage on which the SiC substrate is placed to a temperature of 200° C. or higher by a temperature control function, and dry-etching the SiC substrate by using the patterned resist as a mask to form a via hole;
- and
- after forming the via hole, removing the resist separation layer to separate the resist from the SiC substrate, and further comprising:
- forming a substrate separation layer on a second main surface opposite to the first main surface of the SiC substrate;
- applying an adhesive on the substrate separation layer;
- bonding the SiC substrate to a support substrate by curing the adhesive at a temperature of 200° C. or higher;
- forming the via hole in the SiC substrate bonded to the support substrate;
- and
- after forming the via hole, removing the substrate separation layer to separate the SiC substrate from the support substrate.
A method of manufacturing a semiconductor device comprising:
- forming a substrate separation layer on a SiC substrate;
- applying an adhesive on the substrate separation layer;
- bonding the SiC substrate to a support substrate by using the adhesive at a temperature of 200° C. or higher;
- heating a stage on which the SiC substrate bonded to the support substrate is placed to a temperature of 200° C. or higher by a temperature control function, and dry-etching the SiC substrate to form a via hole;
- and
- after forming the via hole, removing the substrate separation layer to separate the SiC substrate from the support substrate.
Dependencies are inferred from the claim text.