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US 9,805,975 B2Granted
Thin-film transistor array substrate including gate-underlying stepped layer and etch-stopper, and organic light emitting display including the same
AssigneeSamsung Display Co., Ltd.
InventorChungi You
Life of this patent
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Abstract
A thin-film transistor (TFT) array substrate includes a substrate, a gate-underlying stepped layer disposed on the substrate, a gate electrode disposed on the gate-underlying stepped layer, a semiconductor layer formed over the gate electrode, and an etch-stopper disposed on the semiconductor layer. The gate-underlying stepped layer is formed under the gate electrode and has a width greater than a width of the gate electrode.
Claims27
A thin-film transistor (TFT) array substrate, comprising:
- a substrate;
- a gate-underlying stepped layer disposed on the substrate;
- a gate electrode disposed on the gate-underlying stepped layer, wherein the gate-underlying stepped layer has a width greater than a width of the gate electrode;
- a semiconductor layer formed over the gate electrode;
- an etch-stopper disposed on the semiconductor layer;
- and
- a source electrode and a drain electrode,
- wherein a portion of the source electrode and a portion of the drain electrode are disposed on the etch-stopper and overlap the gate-underlying stepped layer, and an entirety of the source electrode and an entirety of the drain electrode do not overlap the gate electrode.
5 more elements
A thin-film transistor (TFT) array substrate, comprising:
- a substrate;
- a gate-underlying stepped layer disposed on the substrate;
- a gate electrode disposed on the gate-underlying stepped layer;
- an oxide semiconductor layer formed over the gate electrode;
- an etch-stopper disposed on the oxide semiconductor layer,
- wherein the etch-stopper has a width about equal to a width of the gate-underlying stepped layer;
- and
- a source electrode and a drain electrode,
- wherein a portion of the source electrode and a portion of the drain electrode are disposed on the etch-stopper and overlap the gate-underlying stepped layer, and an entirety of the source electrode and an entirety of the drain electrode do not overlap the gate electrode.
6 more elements
A thin-film transistor (TFT) array substrate, comprising:
- a substrate;
- a gate-underlying stepped layer disposed on the substrate;
- a gate electrode disposed on the gate-underlying stepped layer;
- an oxide semiconductor layer formed over the gate electrode;
- a gate insulating film disposed between the gate electrode and the oxide semiconductor layer;
- and
- an etch-stopper disposed on the oxide semiconductor layer,
- wherein ends of the etch-stopper extend downward from the etch-stopper in a direction toward the gate-underlying stepped layer, the ends of the etch-stopper are substantially aligned with ends of the gate-underlying stepped layer, a portion of the oxide semiconductor layer and a portion of the gate insulating film are disposed between the ends of the etch-stopper, and the ends of the etch-stopper cover stepped portions of the gate-underlying stepped layer and the gate electrode.
5 more elements
An organic light-emitting display, comprising:
- a substrate;
- a display area comprising a plurality of pixels;
- and
- a non-display area disposed around the display area,
- wherein each of the plurality of pixels comprises:
- a gate-underlying stepped layer disposed on the substrate;
- a gate electrode disposed on the gate-underlying stepped layer, wherein the gate-underlying stepped layer has a width greater than a width of the gate electrode;
- an oxide semiconductor layer formed over the gate electrode;
- an etch-stopper disposed on the oxide semiconductor layer;
- and
- a source electrode and a drain electrode,
- wherein a portion of the source electrode and a portion of the drain electrode are disposed on the etch stopper and overlap the gate-underlying stepped layer, and an entirety of the source electrode and an entirety of the drain electrode do not overlap the gate electrode.
9 more elements
An organic light-emitting display, comprising:
- a substrate;
- a display area comprising a plurality of pixels;
- and
- a non-display area disposed around the display area,
- wherein each of the plurality of pixels comprises:
- a gate-underlying stepped layer disposed on the substrate;
- a gate electrode disposed on the gate-underlying stepped layer;
- an oxide semiconductor layer formed over the gate electrode;
- an etch-stopper disposed on the oxide semiconductor layer,
- wherein the etch-stopper has a width about equal to a width of the gate-underlying stepped layer;
- and
- a source electrode and a drain electrode,
- wherein a portion of the source electrode and a portion of the drain electrode are disposed on the etch-stopper and overlap the gate-underlying stepped layer, and an entirety of the source electrode and an entirety of the drain electrode do not overlap the gate electrode.
10 more elements
A method of forming a thin-film transistor (TFT) array substrate, comprising:
- forming a substrate;
- forming a gate-underlying stepped layer on the substrate;
- forming a gate electrode on the gate-underlying stepped layer, wherein the gate-underlying stepped layer has a width greater than a width of the gate electrode;
- forming a semiconductor layer over the gate electrode;
- forming an etch-stopper on the semiconductor layer;
- and
- forming a source electrode and a drain electrode over the etch-stopper,
- wherein a portion of the source electrode and a portion of the drain electrode are disposed on the etch-stopper and overlap the gate-underlying stepped layer, and an entirety of the source electrode and an entirety of the drain electrode do not overlap the gate electrode.
5 more elements
Dependencies are inferred from the claim text.