Selective deposition of metallic films
AssigneeASM IP Holding B.V.
InventorsShang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Abstract
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.
Claims21
A process for selectively depositing a film on a substrate comprising a first metallic surface and a second surface comprising silicon, the process comprising:
- passivating a reaction chamber in which a selective deposition process is to be performed;
- subjecting the substrate to a first surface treatment process comprising exposing the substrate to a plasma;
- subsequent to the first surface treatment process, performing one or more selective deposition cycles in the reaction chamber, each cycle comprising;
- contacting the substrate with a first precursor comprising silicon or boron to selectively form a layer of first material comprising Si or B on the first metallic surface relative to the second surface comprising silicon;
- and
- converting the first material on the first metallic surface to a second metallic material by exposing the first material to a second precursor comprising metal;
- wherein the second metallic material is deposited on the first metallic surface of the substrate relative to the second surface comprising silicon with a selectivity of greater than about 50%.
Dependencies are inferred from the claim text.