Dual silicide liner flow for enabling low contact resistance

A method for fabricating a semiconductor device, comprising:

• depositing a sacrificial liner in self-aligned contact openings in first and second regions, where the first region includes a first device type and the second region includes a second device type;
• filling the self-aligned contact openings of the first and second regions with a sacrificial material;
• blocking the second region with a first mask to completely remove the sacrificial material from the first region;
• removing the first mask from the second region and completely removing the sacrificial liner from the first region;
• forming a first liner in the self-aligned contact openings of the first region;
• forming first contacts in the first region on the first liner;
• blocking the first region with a second mask to remove the sacrificial material from the second region;
• removing the second mask from the first region and removing the sacrificial liner from the second region;
• forming a second liner in the self-aligned contact openings of the second region;
• and
• forming second contacts in the second region.