Method for forming deep trench spacing isolation for CMOS image sensors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTai-I Yang, Jung-I Lin, Ta-Chun Lin, Tien-Lu Lin, Chen-Jong Wang
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Abstract
A method for manufacturing an image sensor with deep trench spacing isolation is provided. A trench is formed in a semiconductor substrate, around and between a plurality of pixel regions of the semiconductor substrate. A cap is formed using epitaxy to seal a gap between sidewalls of the trench. Pixel sensors corresponding to the plurality of pixel regions are formed over or within the corresponding pixel regions. An image sensor resulting from the method is also provided.
Claims20
A method for manufacturing an image sensor, the method comprising:
- forming a trench in a semiconductor substrate, around and between a plurality of pixel regions of the semiconductor substrate;
- forming a cap to seal a gap between sidewalls of the trench, wherein forming the cap comprises epitaxy;
- and
- forming pixel sensors corresponding to the plurality of pixel regions over or within the corresponding pixel regions.
A method for deep trench spacing isolation, the method comprising:
- performing an etch into a semiconductor substrate to form a trench laterally enclosing a device region of the semiconductor substrate;
- forming an epitaxial layer in the trench, wherein a top surface of the epitaxial layer is even with a top surface of the semiconductor substrate, and wherein a bottom surface of the epitaxial layer is spaced over a bottom surface of the trench;
- converting the epitaxial layer to another material to form a cap sealing the trench;
- and
- forming a semiconductor device in the device region.
A method for deep trench spacing isolation, the method comprising:
- performing an etch into a semiconductor substrate to form a trench laterally enclosing a device region of the semiconductor substrate;
- forming a dielectric layer lining sidewalls of the trench and having a top surface recessed below a top surface of the semiconductor substrate;
- forming a semiconductor layer completely filling the trench at a level over the dielectric layer, such that a bottom surface of the semiconductor layer is over and contacts the top surface of the dielectric layer;
- oxidizing the semiconductor layer to form a cap sealing the trench over the dielectric layer;
- and
- forming a semiconductor device in the device region.
Dependencies are inferred from the claim text.