Wafer scale packaging
AssigneeAkoustis, Inc.
InventorJeffrey B. Shealy
Life of this patent
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Abstract
A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.
Claims19
A wafer scale package apparatus, the apparatus comprising:
- a partially completed semiconductor substrate, the semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each of the devices having a first electrode member, a second electrode member, and an overlying passivation material;
- for at least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, the repassivation material having a first region exposing the first electrode member and a second region exposing the second electrode member;
- an under metal material overlying the repassivation material and covering the first region and the second region such that the first electrode member and the second electrode member are each in electrical and physical contact with the under metal material;
- a copper pillar interconnect structure configured to fill the first region and the second region using a deposition process to form a first copper pillar structure overlying the first electrode member and a second copper pillar structure overlying the second electrode member;
- and
- a first solder bump structure overlying the first copper pillar structure and a second solder bump structure overlying the second copper pillar structure for the single crystal acoustic resonator device to be configured with the external connection.
A method of wafer scale packaging a grouping of single crystal acoustic resonator devices, the method comprising:
- providing a partially completed semiconductor substrate, the semiconductor substrate comprising N number of single crystal acoustic resonator devices, each of the N devices having a first electrode member and a second electrode member, and an overlying passivation material, the N devices being numbered R1, R2, . . . RN−1, and RN;
- for at least each of devices R1 and RN, forming a repassivation material overlying the passivation material, the repassivation material having a first region exposing the first electrode member and a second region exposing the second electrode member;
- forming an under metal material overlying the repassivation material and covering the first region and the second region such that the first electrode member and the second electrode member are each in electrical and physical contact with the under metal material;
- forming a thickness of resist material overlying the under metal material to cause a substantially planarized surface region;
- patterning the substantially planarized surface region of the thickness of resist material to expose a first region corresponding to the first electrode member and a second region corresponding to the second electrode member;
- filling the first region and the second region using a deposition process to form a first copper pillar structure overlying the first electrode member and a second copper pillar structure overlying the second electrode member;
- forming a solder material overlying the first copper pillar structure and the second copper pillar structure;
- processing the thickness of resist material to substantially remove the thickness of resist material and expose the under metal material;
- removing any exposed portions of the under metal material;
- subjecting the solder material on the first copper pillar structure and the second copper pillar structure to cause formation of a first solder bump structure overlying the first copper pillar structure and a second solder bump structure overlying the second copper pillar structure for at least each of R1 and RN.
Dependencies are inferred from the claim text.