System and method for multi-location zapping
AssigneeApplied Materials Israel Ltd.
InventorsTuvia Biber, Efim Kerner, Efraim Siman Tov
Life of this patent
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Abstract
A system for zapping a wafer, the system may include a pulse generation unit that is configured to generate (a) first zapping pulses for causing a breakdown in a first location of a backside insulating layer of a wafer, and (b) second zapping pulses for causing a breakdown in a second location of the backside insulating layer of the wafer; a first conductive interface that is configured to convey the first zapping pulses to the first location, while contacting the first location; a second conductive interface that is configured to convey the second zapping pulses to the second location, while contacting the second location; and wherein the first location differs from the second location.
Claims13
A system for zapping a wafer, the system comprising:
- a pulse generation unit that is configured to generate (a) first zapping pulses for causing a breakdown in a first location of a backside insulating layer of a wafer, and (b) second zapping pulses for causing a breakdown in a second location of the backside insulating layer of the wafer different than the first location;
- a first conductive interface that is configured to convey the first zapping pulses to the first location, while contacting the first location;
- a second conductive interface that is configured to convey the second zapping pulses to the second location, while contacting the second location;
- and
- a controller that is configured to control at least one out of an intensity of the zapping pulses, duration of the zapping pulses and an interval between adjacent zapping pulses.
A method for zapping a wafer, the method comprising:
- generating, by a pulse generation unit, first zapping pulses and second zapping pulses;
- supplying, by a first conductive interface, the first zapping pulses to a first location of a backside insulating layer of a wafer thereby causing a breakdown of the backside insulating layer in the first location;
- supplying, by a second conductive interface, the second zapping pulses to a second location of the backside insulating layer of a wafer thereby causing a breakdown of the backside insulating layer in the second location;
- monitoring, by a sensor, a coupling between the first conductive interface and the second conductive interface to provide a monitoring result;
- and
- controlling, by a controller, the generating of the first zapping pulses and the second zapping pulses in response to the monitoring result.
Dependencies are inferred from the claim text.