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US 9,805,951 B1Granted
Method of integration process for metal CMP
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Chien Chi, Pei-Hsuan Lee, Hung-Wen Su
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Abstract
A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate. The substrate has an edge region and a center region. The method also includes forming a dielectric ring in the edge region, forming a metal layer over the center region of the substrate and over the dielectric ring in the edge region of the substrate and polishing the metal layer in the center region and the edge region to expose the dielectric ring in the edge region of the substrate.
Claims20
A method comprising:
- forming a dielectric layer over a substrate, the substrate having an edge region and a center region;
- forming a dielectric ring in the edge region;
- forming a metal layer over the center region of the substrate and over the dielectric ring in the edge region of the substrate;
- and
- polishing the metal layer in the center region and the edge region to expose the dielectric ring in the edge region of the substrate.
2 more elements
A method comprising:
- forming a dielectric layer over a substrate, the substrate having an edge region and a center region;
- patterning the dielectric layer to form a dielectric ring in the edge region of the substrate and a trench within the dielectric layer in the center region of the substrate;
- forming a metal layer over the dielectric ring and within the trench;
- and
- polishing the metal layer to remove the metal layer overlaying the dielectric ring and the metal layer from within the trench.
2 more elements
A method comprising:
- forming a dielectric layer over a substrate, the substrate having an edge region and a center region;
- forming a patterned photoresist layer over the dielectric layer such that the patterned photoresist layer covers the edge region of the substrate and has a plurality of openings in the center region;
- etching the dielectric layer through the patterned photoresist layer to form a dielectric ring in the edge region and a plurality of trenches in the dielectric layer in the center region;
- forming a metal layer over the dielectric ring and within the plurality of trenches;
- and
- performing a chemical mechanical polishing process to remove the metal layer overlaying the dielectric ring and from within the plurality of trenches.
3 more elements
Dependencies are inferred from the claim text.