Method of modifying epitaxial growth shape on source drain area of transistor
AssigneeApplied Materials, Inc.
InventorsYihwan Kim, Xuebin Li, Abhishek Dube
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Abstract
Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.
Claims20
A method for forming a semiconductor device, comprising:
- forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface, a first corner, and a second corner opposite the first corner;
- depositing a cap layer non-conformally on the top surface;
- and
- removing the first and second corners of the epitaxial film.
A method for forming a semiconductor device, comprising:
- forming an epitaxial film over a semiconductor fin;
- depositing a cap layer on the epitaxial film;
- and
- removing portions of the epitaxial film in a lateral direction, wherein the epitaxial film has a first etch rate in an etch process and the cap layer has a second etch rate in the etch process, wherein the second etch rate is slower than the first etch rate.
A method for forming a semiconductor device, comprising:
- disposing a substrate in a process chamber, the substrate having a surface including one or more dielectric regions adjacent to one or more semiconductor fins;
- performing a non-selective deposition of a semiconductor material on the surface, wherein a first portion of the semiconductor material is deposited on the semiconductor fins and a second portion of the semiconductor material is deposited on the dielectric regions;
- and
- selectively removing the second portion to form gaps separating areas of the first portion.
Dependencies are inferred from the claim text.