Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
AssigneeLam Research Corporation
InventorsKeren Jacobs Kanarik, Jeffrey Marks, Harmeet Singh, Samantha Tan, Alexander Kabansky, Wenbing Yang, Taeseung Kim, Dennis M. Hausmann, Thorsten Lill
Life of this patent
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Abstract
Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.
Claims26
An apparatus for processing substrates, the apparatus comprising:
- one or more process chambers, each process chamber comprising a chuck;
- one or more gas inlets into the process chambers and associated flow-control hardware;
- and
- a controller having at least one processor and a memory, wherein
- the at least one processor and the memory are communicatively connected with one another,
- the at least one processor is at least operatively connected with the flow-control hardware, and
- the memory stores computer-executable instructions for controlling the at least one processor to at least control the flow-control hardware to:
- etch the substrate by atomic layer etch in a chamber;
- and
- deposit a film by atomic layer deposition,
- wherein the etching and the depositing are performed without breaking vacuum.
An apparatus for processing substrates, the apparatus comprising:
- one or more process chambers, each process chamber comprising a chuck;
- one or more gas inlets into the process chambers and associated flow-control hardware;
- and
- a controller having at least one processor and a memory, wherein
- the at least one processor and the memory are communicatively connected with one another,
- the at least one processor is at least operatively connected with the flow-control hardware, and
- the memory stores computer-executable instructions for controlling the at least one processor to at least control the flow-control hardware to:
- (a) expose a substrate to alternating pulses of an etchant and purge gas to etch the substrate layer by layer;
- (b) expose the substrate to alternating pulses of a reducing agent and a precursor to deposit a film on the etched substrate;
- and
- (c) repeat (a) and (b) without breaking vacuum between performing (a) and (b).
Dependencies are inferred from the claim text.