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US 9,805,939 B2Granted
Dual endpoint detection for advanced phase shift and binary photomasks
AssigneeApplied Materials, Inc.
InventorMichael N. Grimbergen
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Abstract
The present invention provides a method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at certain regions of the photomask to obtain dual endpoints, e.g., etch rate or thickness loss of both a photoresist layer and an absorber layer. By monitoring transmissity of an optical beam transmitted through areas having photoresist layer and etched absorber layer at two different predetermined wavelength, dual process endpoints may be obtained by a signal optical detection.
Claims18
A method of determining dual etching endpoints on an etching process, comprising:
- performing an etching process on an absorber layer disposed on a first surface of a substrate through a patterned photoresist layer in a plasma etch chamber;
- directing radiation having a wavelength between about 200 nm and about 800 nm to an area of the absorber layer uncovered by the patterned photoresist layer during the etching process;
- collecting a first optical signal transmitted through the area of the absorber layer uncovered by the patterned photoresist layer;
- collecting a second optical signal transmitted through an area of the absorber layer covered by the patterned photoresist layer;
- analyzing a waveform obtained from the optical signals at two different wavelengths;
- and
- determining a first endpoint for etching the absorber layer and a second endpoint for etching the photoresist layer based on the transmitted optical signal at the two different wavelengths when an intensity of the transmitted first and second optical signals as detected is about 70 percent to 90 percent more than an initial first and the second optical signals.
4 more elements
A method of determining dual etching endpoints on an etching process, comprising:
- performing an etching process on a chromium containing layer disposed on a first surface of a substrate through a patterned photoresist layer in a plasma etch chamber;
- directing a radiation source having a wavelength from about 200 nm and about 800 nm from the first surface of the substrate to areas both covered and uncovered by the patterned photoresist layer;
- collecting a first optical signal transmitted through the area of the chromium layer uncovered by the patterned photoresist layer to obtain a first waveform from the transmitted first optical signal;
- analyzing the first waveform obtained the transmitted first optical signal transmitted through the first surface of the substrate;
- determining a first endpoint of the etching process when a change in slope of the first optical signal in the first waveform is about greater than 50 percent of an original detected slope;
- collecting a second optical signal transmitted through an area of the absorber layer covered by the patterned photoresist layer to obtain a second waveform from the transmitted second optical signal;
- analyzing the second waveform obtained from the second optical signals transmitted through the photoresist layer;
- and
- determining a second endpoint of the etching process when a change in slope of the second waveform is about greater than 50 percent of an original detected slope.
6 more elements
A method of determining dual etching endpoints on an etching process, comprising:
- performing an etching process on a chromium containing layer disposed on a first surface of a substrate through a patterned photoresist layer in a plasma etch chamber;
- directing a radiation source to areas of the chromium layer uncovered by the patterned photoresist layer and a surface of the photoresist layer;
- collecting a first optical signal at a wavelength between about 200 nm and about 400 nm transmitted through the area uncovered by the patterned photoresist layer to obtain a first waveform from the transmitted first optical signal;
- analyzing a first waveform obtained the transmitted first optical signal reflected from the first surface of the substrate;
- determining a first endpoint of the etching process when a change in slope of the transmitted first optical signal is about greater than 50 percent of an original detected slope;
- directing a second radiation source having a second wavelength about greater than 400 nm from the area of the surface of the photoresist layer;
- collecting a second optical signal transmitted through the surface of the photoresist layer to obtain a second waveform from the transmitted second optical signal;
- analyzing a second waveform obtained the transmitted second optical signal transmitted through the photoresist layer;
- and
- determining a second endpoint of the photoresist layer when a change in slope of the transmitted second optical signal is about greater than 50 percent of an original detected slope.
7 more elements
Dependencies are inferred from the claim text.