Method of manufacturing semiconductor device and semiconductor device
AssigneeRenesas Electronics Corporation
InventorTomoya Kashiwazaki
Life of this patent
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Abstract
Reliability of a semiconductor device is improved. A power device includes: a semiconductor chip; a chip mounting part; a solder material electrically coupling a back surface electrode of the semiconductor chip with an upper surface of the chip mounting part; a plurality of inner lead parts and a plurality of outer lead parts electrically coupled with an electrode pad of the semiconductor chip through wires; and a sealing body for sealing the semiconductor chip and the wires. Further, a recess is formed in a peripheral region of the back surface of the semiconductor chip. The recess has a first surface extending to join the back surface and a second surface extending to join the first surface. Also, a metal film is formed over the first surface and the second surface of the recess.
Claims7
A semiconductor device, comprising:
- a semiconductor chip having a main surface, a back surface on the side opposite to the main surface, a plurality of first electrodes formed over the main surface, and a second electrode formed over the back surface;
- a chip mounting part having an upper surface and a lower surface on the side opposite to the upper surface;
- a bonding material electrically coupling the second electrode of the back surface of the semiconductor chip with the upper surface of the chip mounting part;
- a plurality of leads electrically coupled with the first electrodes, respectively, each of the plurality of leads including an inner lead portion and an outer lead portion;
- and
- a sealing body sealing the semiconductor chip and the chip mounting part,
- wherein a recess is formed in a peripheral region of the back surface of the semiconductor chip,
- wherein the recess has a first surface extending to join the back surface, and a second surface located between the main surface and the back surface in a thickness direction of the semiconductor chip and extending to join the first surface, the first surface being perpendicular to the back surface,
- wherein the back surface and the first surface of the semiconductor chip extend so as to connect through a taper surface portion,
- wherein a metal film is formed over the first surface and the second surface of the recess,
- wherein the sealing body covers the inner lead portions of the plurality of leads,
- wherein the outer lead portions of the plurality of leads are exposed from a first surface of the sealing body, and
- wherein the lower surface of the chip mounting part is exposed from a second surface of the sealing body.
A semiconductor device, comprising:
- a semiconductor chip having a main surface, a back surface on the side opposite to the main surface, a plurality of first electrodes formed over the main surface, and a second electrode formed over the back surface;
- a chip mounting part having an upper surface and a lower surface on the side opposite to the upper surface;
- and
- a bonding material electrically coupling the second electrode of the back surface of the semiconductor chip with the upper surface of the chip mounting part,
- wherein a recess is formed in a peripheral region of the back surface of the semiconductor chip,
- wherein the recess has a first surface extending to join the back surface, and a second surface located between the main surface and the back surface in a thickness direction of the semiconductor chip and extending to join the first surface, the first surface being perpendicular to the back surface,
- wherein the back surface and the first surface of the semiconductor chip extend so as to connect through a taper surface portion, and
- wherein a metal film is formed over the first surface and the second surface of the recess.
Dependencies are inferred from the claim text.