Method for producing nickel thin film on a Si substrate by chemical vapor deposition method, and method for producing Ni silicide thin film on Si substrate

A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, comprising the steps of:

• using a hydrocarbon-type nickel complex represented by a following formula Chem.1 as a raw material compound, which is a nickel complex in which only two ligands, namely a cyclopentadienyl group (Cp) or a derivative of the cyclopentadienyl group (Cp) and an alkenyl group or a derivative of the alkenyl group represented by a formula Chem.2, which is cyclobutenyl, cyclopentenyl, cyclohexenyl, cycloheptenyl, cyclooctenyl, cyclononenyl, or derivatives thereof, are coordinated to nickel and an element other than carbon and hydrogen is not contained in the structure;
• using hydrogen as a reaction gas, and further using a film formation pressure of 1 to 150 torr and a film formation temperature of 80 to 250° C. as film formation conditions
• (In the formula, X represents a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative of the alkenyl group. R1 to R5 which are substituent groups of the cyclopentadienyl group represent CnH2n+1, and n represents an integer of 0 to 6)