Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light
AssigneeSCREEN Holdings Co., Ltd.
InventorsKazuhiko Fuse, Shinichi Kato, Kenichi Yokouchi
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AssigneeSCREEN Holdings Co., Ltd.
InventorsKazuhiko Fuse, Shinichi Kato, Kenichi Yokouchi
Estimating the term…
First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.
A method of heating a substrate by irradiating the substrate with light, the method comprising the steps of:
Dependencies are inferred from the claim text.