Method of forming fine patterns in a semiconductor device and method of manufacturing an electronic device

A method of manufacturing a semiconductor device, the method comprising:

• forming a first hard mask layer on an insulating layer;
• forming a plurality of sacrificial pillars on the first hard mask layer, the plurality of sacrificial pillars being spaced apart from each other in a first and a second direction, and the first direction being substantially perpendicular to the second direction;
• forming a planarized layer filling gaps between the sacrificial pillars;
• forming a plurality of openings in the planarized layer by removing some of the sacrificial pillars so as to expose some portions of the first hard mask layer;
• forming a hard mask pattern by patterning the first hard mask layer using the planarized layer having the openings as an etch mask;
• and
• forming a plurality of holes in the insulating layer by etching the insulating layer using the hard mask pattern as an etch mask.

A method of manufacturing an electronic device, the method comprising:

• providing a semiconductor substrate;
• providing an insulating layer on the semiconductor substrate;
• forming a plurality of first spacer patterns on the substrate, the plurality of first spacer patterns extending in a first direction;
• forming a plurality of second spacer patterns on the substrate, the plurality of second spacer patterns extending in a second direction and crossing the plurality of first spacer patterns;
• using the second spacer patterns to form spacer mask pillars from the first spacer patterns;
• removing some of the spacer mask pillars to form holes in the insulating layer;
• and
• filling the holes with a conductive material.