Hydrogen COGas for carbon implant
AssigneeAxcelis Technologies, Inc.
InventorsNeil K. Colvin, Tseh-Jen Hsieh
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Abstract
A system, apparatus and method for increasing ion source lifetime in an ion implanter are provided. Oxidation of the ion source and ion source chamber poisoning resulting from a carbon and oxygen-containing source gas is controlled by utilizing a hydrogen co-gas, which reacts with free oxygen atoms to form hydroxide and water.
Claims19
A method of increasing a lifetime of an ion source in an ion implantation system configured to produce an ion beam for implanting carbon ions, the method comprising:
- introducing a gaseous substance into an ion source chamber of the ion implantation system at a first flow rate, the gaseous substance including a carbon-containing species;
- introducing an amount of a hydrogen co-gas into the ion source chamber of the ion implantation system at a second flow rate;
- exciting the carbon-containing gaseous species within the ion source chamber to create a plasma of disassociated and ionized carbon and oxygen constituents;
- reacting the disassociated and ionized oxygen constituents of the carbon-containing gaseous species with the hydrogen co-gas, wherein the hydrogen co-gas reacts with oxygen to produce water or hydroxide, therein reducing poisoning of the ion source chamber and increasing ion source lifetime;
- and
- removing the water or hydroxide from the ion source chamber by a vacuum pump system, wherein the first flow rate and the second flow rate are selectively varied so that a maximum amount of oxygen constituents are removed without deleteriously affecting a current of the ion beam.
A method of increasing a lifetime of an ion source in an ion implantation system configured to produce an ion beam for implanting carbon ions, the method comprising:
- introducing a source gas into an ion source chamber of the ion implantation system at a first flow rate, wherein the source gas contains carbon and oxygen;
- introducing an amount of a hydrogen co-gas into the ion source chamber at a second flow rate;
- exciting the source gas within the ion source chamber to create a plasma of disassociated and ionized carbon and oxygen constituents;
- reacting the disassociated and ionized oxygen constituents of the source gas with the hydrogen co-gas to produce one or more of water or hydroxide, therein reducing poisoning of the ion source chamber and increasing ion source lifetime;
- removing the water or hydroxide from the ion source chamber by a vacuum pump system;
- and
- selectively varying the first flow rate and the second flow rate, whereby an amount of the disassociated and ionized oxygen constituents is maximized and removed by the vacuum pump system while maintaining a constant current of the ion beam.
A method of increasing a lifetime of an ion source in an ion implantation system, the method comprising:
- introducing a source gas into an ion source chamber of the ion implantation system at a first flow rate, wherein the source gas contains carbon and oxygen;
- introducing an amount of a hydrogen co-gas into the ion source chamber at a second flow rate;
- exciting the source gas within the ion source chamber to create a plasma of disassociated and ionized carbon and oxygen constituents;
- forming an ion beam containing carbon ions from the plasma of disassociated and ionized carbon and oxygen constituents;
- analyzing a composition of the ion beam during an operation of the ion implantation system;
- determining the amount of the hydrogen co-gas that is introduced into the ion source chamber relative to the source gas based on the analysis of the composition of the ion beam;
- reacting the disassociated and ionized oxygen constituents of the source gas with the hydrogen co-gas to produce one or more of water or hydroxide, therein reducing poisoning of the ion source chamber and increasing ion source lifetime;
- removing the water or hydroxide from the ion source chamber by a vacuum pump system;
- and
- selectively varying the first flow rate and the second flow rate, whereby an amount of the disassociated and ionized oxygen constituents is maximized and removed by the vacuum pump system while maintaining a constant current of the ion beam.
Dependencies are inferred from the claim text.