Operating method of storage device
AssigneeSamsung Electronics Co., Ltd.
InventorDonghun Kwak
Life of this patent
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Abstract
An operating method of a storage device which includes a nonvolatile memory is provided. The operating method includes performing a first program operation on selected memory cells of the nonvolatile memory and storing a first time when the first program operation is performed; and adjusting a program parameter according to a difference between the first time and a second time, and performing a second program operation on the selected memory cells using the adjusted program parameter, the second time being a time when the second program operation is performed.
Claims10
An operating method of a storage device which includes a nonvolatile memory, comprising:
- performing a first program operation on selected memory cells of the nonvolatile memory, and storing a first time when the first program operation is performed;
- adjusting a program parameter according to a difference between the first time and a second time;
- and
- performing a second program operation on the selected memory cells using the adjusted program parameter,
- wherein the second time is a time when the second program operation is performed,
- wherein during the second program operation, a program voltage is iteratively applied to a word line connected to the selected memory cells,
- wherein the program parameter comprises an increment of the program voltage iteratively applied to the word line, and
- wherein the adjusting comprises increasing the increment as the difference increases.
An operating method of a storage device which includes a nonvolatile memory, comprising:
- performing a first program operation on selected memory cells of the nonvolatile memory, and storing a first time when the first program operation is performed;
- adjusting a program parameter according to a difference between the first time and a second time;
- and
- performing a second program operation on the selected memory cells using the adjusted program parameter,
- wherein the second time is a time when the second program operation is performed, and
- wherein the selected memory cells are programmed by the first program operation and the second program operation without an erase operation between the first program operation and the second program operation.
An operating method of a storage device which includes a nonvolatile memory, comprising:
- performing a first program operation on selected memory cells of the nonvolatile memory, and storing a first time when the first program operation is performed;
- adjusting a program parameter according to a difference between the first time and a second time;
- and
- performing a second program operation on the selected memory cells using the adjusted program parameter,
- wherein the second time is a time when the second program operation is performed, and
- wherein the first program operation programs the selected memory cells to at least two states, and the second program operation programs the selected memory cells to more than the at least two states.
Dependencies are inferred from the claim text.