Operation method operating nonvolatile memory device having plurality of memory blocks
AssigneeSamsung Electronics Co., Ltd.
InventorsCheon An Lee, Mu-Hui Park, Jiho Cho, Ji-Young Lee, Yoon-Hee Choi
Life of this patent
Estimating the term…
Abstract
A method of operating a nonvolatile memory device is provided as follows. The nonvolatile memory device includes memory blocks each of which has word lines. A setup voltage is applied to the word lines. A word line voltage is applied to a first word line selected from the word lines. Recovery voltages are applied to the word lines. Each recovery voltage is applied to at least one corresponding word line of the word lines. The recovery voltages have different voltage levels from each other.
Claims7
A method of operating a nonvolatile memory device including a plurality of memory blocks, each memory block having a plurality of word lines, the method comprising:
- applying a setup voltage to the word lines, wherein the word lines are divided into a plurality of recovery regions;
- applying a word line voltage to a first word line selected from the word lines;
- and
- applying a plurality of recovery voltages to the plurality of recovery regions,
- wherein each recovery voltage is applied to at least one corresponding word line of the word lines,
- wherein the recovery voltages have different voltage levels from each other, and
- wherein the voltage levels of the recovery voltages are different from a voltage level of the setup voltage.
Dependencies are inferred from the claim text.