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US 9,805,803 B2Granted
Circuit for adjusting a select gate voltage of a non-volatile memory during erasure of memory cells based on a well voltage
AssigneeMacronix International Co., Ltd.
InventorsShuo-Nan Hung, Shin-Jang Shen, Wei-Jen Chen
Life of this patent
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Abstract
A circuit for adjusting a select gate voltage of a non-volatile memory is provided. The circuit includes a well, a select gate, an adjustment unit, and a switch. There is a capacitive coupling between the well and the select gate. The adjustment unit generates a driving voltage for the select gate. The switch is coupled in series with the adjustment unit between the select gate and the well.
Claims6
A circuit for adjusting a select gate voltage of a non-volatile memory, comprising:
- a well;
- a select gate, connected to the well through a capacitive coupling path between the well and the select gate;
- an adjustment unit generating a driving voltage for the select gate;
- and
- a switch coupled in series with the adjustment unit between the select gate and the well,
- wherein the adjustment unit generates the driving voltage based on a voltage of the well, and
- wherein the adjustment unit reduces the voltage of the well to generate the driving voltage.
4 more elements
Dependencies are inferred from the claim text.