Zero leakage, high noise margin coupled giant spin hall based retention latch
AssigneeSamsung Electronics Co., Ltd.
InventorsTitash Rakshit, Borna Obradovic
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AssigneeSamsung Electronics Co., Ltd.
InventorsTitash Rakshit, Borna Obradovic
Estimating the term…
A non-volatile data retention circuit, which is configured to store complementary volatile charge states of an external latch, comprises a coupled giant spin hall latch configured to generate and store complementary non-volatile spin states corresponding to the complementary volatile charge states of the external latch in response to receiving a charge current from the external latch, and to generate a differential charge current signal corresponding to the complementary non-volatile spin states in response to application of a read voltage, a write switch coupled to the coupled giant spin hall latch and configured to selectively enable flow of the charge current from the external latch to the coupled giant spin hall latch in response to a sleep signal, and a read switch coupled to the coupled giant spin hall latch and to selectively enable the application of the read voltage to the coupled giant spin hall latch.
A non-volatile data retention circuit configured to store complementary volatile charge states of an external latch, the non-volatile data retention circuit comprising:
A data retention system comprising:
A method of retaining complementary volatile charge states of a volatile data latch when powered down, the method comprising:
A method of restoring complementary volatile charge states of a volatile data latch when powering up, the method comprising:
Dependencies are inferred from the claim text.