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US 9,805,789 B2Granted
Oxide based memory
AssigneeMicron Technology, Inc.
InventorsD. V. Nirmal Ramaswamy, Gurtej S. Sandhu
Life of this patent
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Abstract
Methods, devices, and systems associated with oxide based memory are described herein. In one or more embodiments, a method of forming an oxide based memory cell includes forming a first electrode, forming a tunnel barrier, wherein a first portion of the tunnel barrier includes a first material and a second portion of the tunnel barrier includes a second material, forming an oxygen source, and forming a second electrode.
Claims12
A method of forming a memory cell, comprising:
- forming a first electrode;
- forming a tunnel barrier over the first electrode, wherein the tunnel barrier is a graded tunnel barrier that includes an aluminum oxide material and a different material, wherein the graded tunnel barrier is formed by diffusing the different material into the aluminum oxide material with a continually increasing proportion;
- forming an oxygen source over the tunnel barrier;
- forming a second electrode over the oxygen source;
- and
- applying a biasing voltage to the memory cell such that oxygen ions move to the aluminum oxide material and the different material from the oxygen source creating an oxygen ion gradient increasing from the oxygen source to the first electrode and wherein the oxygen ion gradient is based on an activation energy of the graded tunnel barrier.
3 more elements
A method of forming an oxide based memory cell, comprising:
- forming a first electrode;
- forming a tunnel barrier by depositing an aluminum oxide material and doping the aluminum oxide material of the tunnel barrier with a different material, wherein the aluminum oxide material has a first activation energy for oxygen ion diffusion and the different material has a second activation energy for oxygen ion diffusion, and wherein forming the tunnel barrier includes depositing the aluminum oxide material over the first electrode to have a composition starting as approximately 100% of the aluminum oxide material at the interface of the first electrode and the tunnel barrier and continually increasing proportion of the different material in the tunnel barrier throughout the tunnel barrier until the tunnel barrier includes approximately 100% of the different material at the interface of the tunnel barrier and an oxygen source;
- forming the oxygen source over the tunnel barrier;
- forming a second electrode over the oxygen source;
- and
- applying a biasing voltage to the memory cell such that oxygen ions move to the aluminum oxide material and the different material from the oxygen source creating an oxygen ion gradient increasing from the oxygen source to the first electrode and wherein the oxygen ion gradient is based on an activation energy of the graded tunnel barrier.
3 more elements
A method of forming a memory cell, comprising:
- forming a first electrode;
- forming a tunnel barrier over the first electrode, wherein the tunnel barrier is a graded tunnel barrier that includes an aluminum oxide material and a different material, wherein the graded tunnel barrier is formed by diffusing the different material into the aluminum oxide material with a continually increasing proportion, and wherein forming the tunnel barrier over the first electrode includes forming the graded tunnel barrier by depositing the aluminum oxide material over the first electrode to have a composition starting as approximately 100% of the aluminum oxide material at an interface of the first electrode and the tunnel barrier and continually increasing proportion of the different material in the tunnel barrier throughout the tunnel barrier until the tunnel barrier includes approximately 100% of the different material at an interface of the tunnel barrier and an oxygen source;
- forming the oxygen source over the tunnel barrier;
- forming a second electrode over the oxygen source;
- and
- applying a biasing voltage to the memory cell such that oxygen ions move to the aluminum oxide material and the different material from the oxygen source creating an oxygen ion gradient increasing from the oxygen source to the first electrode and wherein the oxygen ion gradient is based on an activation energy of the graded tunnel barrier.
3 more elements
Dependencies are inferred from the claim text.