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US 9,805,770 B1Granted
Memristor access transistor controlled non-volatile memory programming methods
AssigneeHewlett Packard Enterprise Development LP
InventorsEmmanuelle J. Merced Grafals, John Paul Strachan, Noraica Davila
Life of this patent
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Abstract
A set procedure of a one transistor, one memristor memory elements may comprise determining a gate voltage for the transistor based on the desired target value. Increasing set pulses may be applied to memristor while the gate is held at the determined gate voltage.
Claims20
A method, comprising:
- reading a value of a one transistor, one memristor (1T1R) element a first time;
- determining a gate voltage for the 1T1R element based on a target value;
- if the value read the first time is below a target value range, applying the gate voltage to the gate of the 1T1R element and a first set voltage to an electrode of the memristor of the 1T1R element;
- reading the value of the 1T1R element a second time;
- if the second read value is below the target value range, applying the gate voltage to the gate of the 1T1R element and a second set voltage to the electrode of the memristor of the 1T1R element, the second set voltage being greater than the first set voltage;
- and
- if the second read value is above the target value range, applying a reset gate voltage to the gate of the 1T1R element and a reset voltage to a second electrode of the memristor.
4 more elements
A system, comprising:
- a memory element comprising a memristor coupled to an access transistor;
- a controller coupled to the memory element, the controller comprising logic to:
- receive a target value for the memristor;
- determine a set gate voltage for a gate of the access transistor based on the target value and historical information regarding the memory element;
- and
- with the gate of the access transistor held at the set gate voltage, apply increasing set voltage pulses to the memristor until a value of the memristor is within a range about the target value or the value of the memristor overshoots the target value.
3 more elements
A controller comprising logic to:
- receive a target value for a memristor;
- perform a set of write attempts for the memristor until a value of the memristor is within a range about the target value or a maximum number of write attempts is reached, each write attempt comprising:
- reading a current value of the memristor;
- if the current value is below the threshold of the target value, setting an access transistor gate voltage to a set gate voltage determined based on the target value and applying a set pulse to the memristor;
- and
- if the current value is above the threshold of the target value, setting the access transistor gate voltage to a reset gate voltage and applying a reset pulse to the memristor.
3 more elements
Dependencies are inferred from the claim text.