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US 9,805,154 B2Granted
Method of lithography process with inserting scattering bars
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsIrene Ho, Ai-Jen Hung, Hung-Chang Hsieh, Kuei-Liang Lu, Ya Hui Chang
Life of this patent
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Abstract
The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout including a first main feature and inserting a first plurality of scattering bars in the IC design layout to form a first circular pattern of scattering bars around the first main feature. The first main feature is positioned at a center portion of the first circular pattern of scattering bars.
Claims20
A method comprising:
- receiving an integrated circuit (IC) design layout including a first main feature and a second main feature;
- and
- inserting a first plurality of scattering bars in the IC design layout to form a first circular pattern of scattering bars around the first main feature, wherein the first main feature is positioned at a center portion of the first circular pattern of scattering bars, the first plurality having at least eight scattering bars;
- inserting a second plurality of scattering bars in the IC design layout to form a second circular pattern of scattering bars around the second main feature, wherein the second main feature is positioned at a center portion of the second circular pattern of scattering bars, the second plurality having at least eight scattering bars, wherein a single scattering bar is shared between the first plurality of scattering bars and the second plurality of scattering bars;
- and
- fabricating a mask having the IC design layout.
3 more elements
A method comprising:
- receiving an integrated circuit (IC) design layout including a plurality of main features;
- and
- inserting a plurality of scattering bars in the IC design layout, wherein each of the main features is surrounded by a subgroup of the scattering bars, wherein each subgroup has 8N of the scattering bars, wherein each of the scattering bars is positioned uniformly along a circle with the respective main feature as the circle's center, wherein the scattering bars in different subgroups are positioned in a similar position in the respective circles such that a single scattering bar is shared between two of the subgroups, wherein the scattering bars have a same central angle between two adjacent SBs, which is equal to about (360)/(8N), wherein N is an integer;
- and
- fabricating a mask having the IC design layout.
2 more elements
A method comprising:
- receiving an integrated circuit (IC) design layout including a first main feature and a second main feature, wherein the first main feature and a second main feature have a same shape;
- inserting a first subgroup of at least eight scattering bars in the IC design layout, wherein the first subgroup is positioned uniformly along a first circle with the first main feature in its center;
- and
- inserting a second subgroup of at least eight scattering bars in the IC design layout, wherein the second subgroup is positioned uniformly along a second circle with the second main feature in its center;
- wherein each of the first subgroup and the second subgroup has 8N scattering bars, wherein the scattering bars in the first subgroup are positioned in the first circle in a similar position as the scattering bars in the second subgroup in the second circle, wherein a single scattering bar is shared between the first subgroup and the second subgroup;
- and
- fabricating a mask having the IC design layout.
4 more elements
Dependencies are inferred from the claim text.