Method and device for generating an adjustable bandgap reference voltage
AssigneeSTMicroelectronics (Rousset) SAS
InventorsJimmy Fort, Thierry Soude
Life of this patent
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AssigneeSTMicroelectronics (Rousset) SAS
InventorsJimmy Fort, Thierry Soude
Estimating the term…
A circuit includes a first PMOS transistor that includes a first PMOS source coupled to a first input node, a first PMOS gate, and a first PMOS drain. A second PMOS transistor includes a second PMOS source coupled to a second input node, a second PMOS gate, and a second PMOS drain coupled to the second PMOS gate. A first resistor coupled between the first PMOS source and a ground node. A first diode element coupled between the first resistor and the ground node and a second diode element coupled between the second PMOS source and the ground node. A third PMOS transistor includes a third PMOS gate, a third PMOS source coupled to a supply node, and a third PMOS drain coupled to the first input node. A fourth PMOS transistor includes a fourth PMOS gate coupled to the third PMOS gate, a fourth PMOS source coupled to the supply node, and a fourth PMOS drain coupled to the second input node.
A circuit comprising:
A circuit comprising:
A circuit comprising:
Dependencies are inferred from the claim text.